Defect reduction of laterally regrown GaN on GaN/patterned sapphire substrates

[1]  Yiping Zeng,et al.  Fabrication of nano-patterned sapphire substrates and their application to the improvement of the performance of GaN-based LEDs , 2008 .

[2]  Jen-Inn Chyi,et al.  Light output improvement of InGaN ultraviolet light-emitting diodes by using wet-etched stripe-patterned sapphire substrates , 2007 .

[3]  Cheul‐Ro Lee,et al.  Characteristic Comparison of GaN Grown on Patterned Sapphire Substrates Following Growth Time , 2007 .

[4]  Chia-Feng Lin,et al.  Defect reduction and efficiency improvement of near-ultraviolet emitters via laterally overgrown GaN on a GaN/patterned sapphire template , 2006 .

[5]  H. Jia,et al.  Investigation of characteristics of laterally overgrown GaN on striped sapphire substrates patterned by wet chemical etching , 2006 .

[6]  R. Horng,et al.  Efficiency improvement of near-ultraviolet InGaN LEDs using patterned sapphire substrates , 2005, IEEE Journal of Quantum Electronics.

[7]  S. Kamiyama,et al.  Laser diode of 350.9 nm wavelength grown on sapphire substrate by MOVPE , 2004 .

[8]  T. Wen,et al.  Lateral epitaxial patterned sapphire InGaN/GaN MQW LEDs , 2004 .

[9]  S. Einfeldt,et al.  Microstructure of heteroepitaxial GaN revealed by x-ray diffraction , 2003 .

[10]  Takashi Mukai,et al.  InGaN-Based Near-Ultraviolet and Blue-Light-Emitting Diodes with High External Quantum Efficiency Using a Patterned Sapphire Substrate and a Mesh Electrode , 2002 .

[11]  Takashi Mukai,et al.  Phosphor-Conversion White Light Emitting Diode Using InGaN Near-Ultraviolet Chip , 2002 .

[12]  Tsunemasa Taguchi,et al.  High Output Power InGaN Ultraviolet Light-Emitting Diodes Fabricated on Patterned Substrates Using Metalorganic Vapor Phase Epitaxy , 2001 .

[13]  Shuji Nakamura,et al.  The blue laser diode-the complete story , 2000 .

[14]  Yoon-Kyu Song,et al.  AlGaN/GaN quantum well ultraviolet light emitting diodes , 1998 .

[15]  R. Davis,et al.  The formation of crystalline defects and crystal growth mechanism in InxGa1−xN/GaN heterostructure grown by metalorganic vapor phase epitaxy , 1998 .

[16]  D. Bimberg,et al.  Wet Chemical Etching of High Quality V‐Grooves with {111} A Sidewalls on (001) InP , 1996 .

[17]  M. Lagally,et al.  Scanning tunneling microscopy and tunneling luminescence of the surface of GaN films grown by vapor phase epitaxy , 1995, cond-mat/9511068.

[18]  K. Hiramatsu,et al.  Selective growth of wurtzite GaN and AlxGa1-xN on GaN/sapphire substrates by metalorganic vapor phase epitaxy , 1994 .