PZT thin films for low voltage actuation: Fabrication and characterization of the transverse piezoelectric coefficient

Abstract Transverse piezoelectric coefficient d31 is a very important characteristic of lead zirconate titanate (PZT) thin films, which have great significance for enabling MEMS applications. In this work, the d31 characteristics of PZT thin-films actuated at low voltages of less than 1 V are investigated. Square-shaped bending-type PZT thin film microactuators comprising 600 nm thick sol–gel derived 52/48 PZT thin film on SiO2/Ta/Pt layers are fabricated using thin film deposition techniques and experimentally characterized for their piezoelectric behavior. Specifically, the characteristic of the in-plane transverse piezoelectric coefficient d31 is studied as a function of the PZT poling electric fields as well as the applied actuation voltages both at low voltages (

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