EUV Resist Process Performance Investigations on the NXE3100 Full Field Scanner
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Anne-Marie Goethals | Ardavan Niroomand | Ivan Pollentier | Philippe Foubert | Frieda Van Roey | Dieter Van den Heuvel | Kohei Hosokawa
[1] Alessandro Vaglio Pret,et al. Quantification of shot noise contributions to contact hole local CD nonuniformity , 2012, Advanced Lithography.
[2] T. Wallow,et al. EUV resist performance: current assessment for sub-22-nm half-pitch patterning on NXE:3300 , 2012, Advanced Lithography.
[3] Makoto Shimizu,et al. Key parameters of EUV resists for contact hole applications , 2012, Advanced Lithography.
[4] Sunyoung Koo,et al. Comparison study for 3x-nm contact hole CD uniformity between EUV lithography and ArF immersion double patterning , 2012, Advanced Lithography.
[5] David Laidler,et al. Progress in EUV lithography towards manufacturing from an exposure tool perspective , 2012, Advanced Lithography.
[6] E. Hendrickx,et al. Latest cluster performance for EUV lithography , 2012, Advanced Lithography.
[7] Frieda Van Roey,et al. Recent Advancements in EUV Resist Materials and Process Performance , 2011 .