论文信息 - Comparison of power and performance for the TFET and MOSFET and considerations for P-TFET

Comparison of power and performance for the TFET and MOSFET and considerations for P-TFET

A detailed circuit assessment of Tunneling Field Effect Transistors (TFET) versus MOSFET transistors operating at a supply voltage near device threshold is reported, including the consideration of P-TFET device design. 20nm gate-length InAs TFET and Si MOSFET device characteristics are simulated and used in circuit simulations. For ultra low power logic applications, TFET logic can operate at equal standby power and switching energy to MOSFET logic, but with better performance. The study shows that the P-TFET device has a lower ION/IOFF ratio than the N-TFET due to the low conduction-band density of states (DOS) in III–V materials. It is shown that for a specific TFET power-performance target, the source doping level needs to be optimized.

[1] Gerhard Klimeck,et al. Performance comparisons of tunneling field-effect transistors made of InSb, Carbon, and GaSb-InAs broken gap heterostructures , 2009, 2009 IEEE International Electron Devices Meeting (IEDM).

[2] G. Klimeck,et al. Atomistic Full-Band Design Study of InAs Band-to-Band Tunneling Field-Effect Transistors , 2009, IEEE Electron Device Letters.

[3] Ian A. Young,et al. Comparison of performance, switching energy and process variations for the TFET and MOSFET in logic , 2011, 2011 Symposium on VLSI Technology - Digest of Technical Papers.

[4] C. Hu,et al. Germanium-source tunnel field effect transistors with record high ION/IOFF , 2006, 2009 Symposium on VLSI Technology.

[5] M. Luisier,et al. Simulation of nanowire tunneling transistors: From the Wentzel–Kramers–Brillouin approximation to full-band phonon-assisted tunneling , 2010 .