Continuous-wave room temperature operated 3.0μm type I GaSb-based lasers with quinternary AlInGaAsSb barriers

Diode lasers emitting at 3.0μm were designed and fabricated. Device active region contained two compressively strained InGaAsSb quantum wells incorporated in quinternary AlInGaAsSb barriers. Laser output power at room temperature was 130mW in continuous wave regime and more than 1W in pulse.

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