Concepts for diamond electronics

The present status in the development of diamond as electronic semiconductor material with wide band-gap (5.45 eV) is reviewed. Since diamond cannot be doped with shallow impurities, specific doping concepts and related diode and FET structures had to be developed, restricted to p-type boron doping. The results allow to predict that diamond high voltage switching diodes, high power RF FET sources and operation at high temperature will surpass the capability of devices designed in competing wide band-gap materials like SiC and GaN.

[1]  E. Kohn,et al.  Hypothesis on the conductivity mechanism in hydrogen terminated diamond films , 2000 .

[2]  D. Gruen,et al.  Synthesis of nanocrystalline diamond thin films from an Ar{endash}CH{sub 4} microwave plasma , 1998 .

[3]  M. Schreck,et al.  Diamond nucleation on iridium buffer layers and subsequent textured growth: A route for the realization of single-crystal diamond films , 2001 .

[4]  J. Jiao,et al.  Carbon encapsulated nanoparticles of Ni, Co, Cu, and Ti , 1998 .

[5]  Guowei Yang,et al.  High-quality heterojunction between p-type diamond single-crystal film and n-type cubic boron nitride bulk single crystal , 2003 .

[6]  U. Mishra,et al.  30-W/mm GaN HEMTs by field plate optimization , 2004, IEEE Electron Device Letters.

[7]  P. May.  The New Diamond Age? , 2008, Science.

[8]  D. Twitchen,et al.  High Carrier Mobility in Single-Crystal Plasma-Deposited Diamond , 2002, Science.

[9]  L. Curtiss,et al.  Synthesis and characterization of highly-conducting nitrogen-doped ultrananocrystalline diamond films , 2001 .

[10]  E. Kohn,et al.  Very high temperature operation of diamond Schottky diode , 1997, IEEE Electron Device Letters.

[11]  D. Gruen,et al.  Ultra-nano-crystalline/single crystal diamond heterostructure diode , 2005 .

[12]  Christoph Wild,et al.  Low-Pressure Synthetic Diamond , 1998 .

[13]  A. Aleksov,et al.  Diamond field effect transistors—concepts and challenges , 2003 .

[14]  T. Wikstrom,et al.  High-voltage single-crystal diamond diodes , 2004, IEEE Transactions on Electron Devices.

[15]  James E. Butler,et al.  Exceptionally high voltage Schottky diamond diodes and low boron doping , 2003 .

[16]  O. Ambacher,et al.  AlN/diamond heterojunction diodes , 2003 .

[17]  Hiroshi Kawarada,et al.  Hydrogen-terminated diamond surfaces and interfaces , 1996 .

[18]  S. H. Wemple,et al.  Control of gate—Drain avalanche in GaAs MESFET's , 1980, IEEE Transactions on Electron Devices.

[19]  E. Kohn,et al.  RF performance of surface channel diamond FETs with sub-micron gate length , 2002 .

[20]  Riedel,et al.  Origin of surface conductivity in diamond , 2000, Physical review letters.

[21]  M. Kubovic,et al.  Surface channel MESFETs on nanocrystalline diamond , 2005 .

[22]  A. Aleksov,et al.  Microwave performance evaluation of diamond surface channel FETs , 2004 .

[23]  M. Katagiri,et al.  Electrical characterization of phosphorus-doped n-type homoepitaxial diamond layers , 2004 .

[24]  E. Kohn,et al.  Diamond power devices. Concepts and limits , 2005 .

[25]  Andrei Vescan,et al.  δ-Doping in diamond , 1999 .

[26]  M. Schreck,et al.  Field effect transistor fabricated on hydrogen-terminated diamond grown on SrTiO3 substrate and iridium buffer layer , 2003 .