论文信息 - 2 dB noise figure, 10.5 GHz LNA using SiGe bipolar technology

2 dB noise figure, 10.5 GHz LNA using SiGe bipolar technology

A monolithically integrated low-noise amplifier (LNA) in 0.5 /spl mu/m, 80 GHz Si/SiGe bipolar technology is presented. Measurement at 10.5 GHz gives a 50 n noise figure of 2.0 dB with a gain of 26 dB. This record noise performance for Si/SiGe LNAs is obtained by careful noise matching of the input stage optimised for the frequency band and technological parameters.

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