The effects of a multiple carrier model of interface trap generation on lifetime extraction for MOSFETs

An isotope e ect in the slope of the substrate current versus lifetime requires a model beyond the standard single carrier lucky electron model typically used for MOSFET lifetime extrapolation. A multiple scattering model is developed which allows us to explain this e ect. A nonlinearity in the drain current vs. device lifetime curve similar to the one predicted by our model has already been observed by the IBM group.