Heavily doped GaAs:Se. I. Photoluminescence determination of the electron effective mass

A systematic study of the photoluminescence (PL) of Se‐doped n‐type GaAs grown by metalorganic chemical vapor deposition is reported. A new method is presented to determine the electron effective mass of n+‐direct‐gap semiconductors from the PL spectrum. GaAs samples with electron densities from 1015 to 8×1018 cm−3 were investigated over the temperature range of 13 to 353 K. The PL spectra of n+‐GaAs are analyzed using a physical model which for the first time explains in a consistent manner both the energy of the peak and the full width at half‐maximum, and accounts for the electron density. An accurate fit of the PL spectra is obtained by invoking band‐to‐band transitions without k selection. The electron exchange and correlation interactions account for all the observed band shrinkage, which reaches 48 meV for n=8.0×1018 cm−3. No significant density of band‐tail states is observed. The Fermi energy is obtained directly from the PL fitting and is used with the measured Hall electron density n to determi...

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