GaN/AlGaN intersubband optoelectronic devices at telecommunication wavelengths

This paper reviews the recent progress towards III-nitride intersubband devices based on either quantum wells or quantum dots. We first discuss the specific features of electron confinement in ultrathin GaN/AlN layers Recent achievements on fast electro-optical modulator devices are described. We then discuss a new concept of III-nitride quantum well detectors based on the quantum cascade scheme, which opens prospects for very fast devices. We finally review the progress towards light-emitting devices and saturable absorbers based on GaN/AlN quantum dots.

[1]  Raffaele Colombelli,et al.  Room-temperature intersubband emission of GaN/AlN quantum wells at /spl lambda/=2.3 /spl mu/m , 2006 .

[2]  Francois H. Julien,et al.  Room temperature demonstration of GaN∕AlN quantum dot intraband infrared photodetector at fiber-optics communication wavelength , 2006 .

[3]  Raffaele Colombelli,et al.  GaN-based quantum dot infrared photodetector operating at 1.38 /spl mu/m , 2005 .

[4]  Francois H. Julien,et al.  Strain-induced interface instability in GaN/AlN multiple quantum wells , 2007 .

[5]  Klaus Lischka,et al.  Cubic GaN∕AlN multiple quantum well photodetector , 2008 .

[6]  Esther Baumann,et al.  Optically nonlinear effects in intersubband transitions of GaN /AlN-based superlattice structures , 2007 .

[7]  Esther Baumann,et al.  Electrically adjustable intersubband absorption of a GaN∕AlN superlattice grown on a transistorlike structure , 2006 .

[8]  P. Crozat,et al.  Electrooptical Modulator at Telecommunication Wavelengths Based on GaN–AlN Coupled Quantum Wells , 2008, IEEE Photonics Technology Letters.

[9]  Marc Ilegems,et al.  Indium surfactant effect on AlN/GaN heterostructures grown by metal-organic vapor-phase epitaxy : Applications to intersubband transitions , 2006 .

[10]  Francois H. Julien,et al.  Growth of thin AlInN∕GaInN quantum wells for applications to high-speed intersubband devices at telecommunication wavelengths , 2006 .

[11]  Yoshiaki Nakano,et al.  Erratum: “Shortest intersubband transition wavelength (1.68 μm) achieved in AlN/GaN multiple quantum wells by metalorganic vapor phase epitaxy” [Appl. Phys. Lett. 82, 4465 (2003)] , 2004 .

[12]  Esther Baumann,et al.  Intersubband photoconductivity at 1.6μm using a strain-compensated AlN∕GaN superlattice , 2005 .

[13]  N. Grandjean,et al.  Lattice-Matched GaN–InAlN Waveguides at = 1:55 m Grown by Metal–Organic Vapor Phase Epitaxy , 2008 .

[14]  Francois H. Julien,et al.  Electron confinement in strongly coupled GaN /AlN quantum wells , 2006 .

[15]  Kei Kaneko,et al.  Polarization dependent loss in III-nitride optical waveguides for telecommunication devices , 2006 .

[16]  F. Julien,et al.  Systematic experimental and theoretical investigation of intersubband absorption in GaN/AlN quantum wells , 2006 .

[17]  Marc Ilegems,et al.  Nitride-based heterostructures grown by MOCVD for near-and mid-infrared intersubband transitions , 2007 .

[18]  Kei Kaneko,et al.  Sub-picosecond all-optical gate utilizing aN intersubband transition. , 2005, Optics express.

[19]  Raffaele Colombelli,et al.  Nitride intersubband devices: prospects and recent developments , 2007 .

[20]  Maria Tchernycheva,et al.  Intraband emission at λ≈1.48μm from GaN∕AlN quantum dots at room temperature , 2008 .

[21]  Esther Baumann,et al.  Latest developments in GaN-based quantum devices for infrared optoelectronics , 2008 .

[22]  R. Colombelli,et al.  GaN-based quantum dot infrared photodetector operating at 1 . 38 l , 2000 .

[23]  P. Holmstrom,et al.  Electroabsorption modulator using intersubband transitions in GaN-AlGaN-AlN step quantum wells , 2006, IEEE Journal of Quantum Electronics.

[24]  Maria Tchernycheva,et al.  Interband and intersubband optical characterization of semipolar (112¯2)-oriented GaN/AlN multiple-quantum-well structures , 2008 .

[25]  Francois H. Julien,et al.  Intersubband spectroscopy of doped and undoped GaN/AlN quantum wells grown by molecular-beam epitaxy , 2003 .

[26]  N. Grandjean,et al.  Lattice-Matched GaN–InAlN Waveguides at $\lambda=1.55\ \mu$m Grown by Metal–Organic Vapor Phase Epitaxy , 2008, IEEE Photonics Technology Letters.

[27]  Myriam Raybaut,et al.  Intersubband resonant enhancement of second-harmonic generation in GaN∕AlN quantum wells , 2006 .

[28]  Yan Li,et al.  Ultrafast all-optical switching with low saturation energy via intersubband transitions in GaN/AlN quantum-well waveguides. , 2007, Optics express.

[29]  Maria Tchernycheva,et al.  Short wavelength (λ=2.13μm) intersubband luminescence from GaN∕AlN quantum wells at room temperature , 2007 .

[30]  Nicolas Grandjean,et al.  Intraband absorptions in GaN/AlN quantum dots in the wavelength range of 1.27–2.4 μm , 2003 .

[31]  Francois H. Julien,et al.  Near‐infrared intersubband emission from GaN/AlN quantum dots and quantum wells , 2008 .

[32]  F. Julien,et al.  Near infrared quantum cascade detector in GaN∕AlGaN∕AlN heterostructures , 2008 .

[33]  Paul Crozat,et al.  Short-wavelength intersubband electroabsorption modulation based on electron tunneling between GaN∕AlN coupled quantum wells , 2007 .

[34]  Marc Ilegems,et al.  Midinfrared intersubband absorption in lattice-matched AlInN/GaN multiple quantum wells , 2005 .

[35]  Paul Crozat,et al.  High-speed operation of GaN/AlGaN quantum cascade detectors at λ≈1.55 μm , 2008 .

[36]  Andrew G. Glen,et al.  APPL , 2001 .

[37]  M. Gonzalez-Herraez,et al.  Characterization of the Resonant Third-Order Nonlinear Susceptibility of Si-Doped GaN–AlN Quantum Wells and Quantum Dots at 1.5 $\mu$m , 2008, IEEE Photonics Technology Letters.