Enhanced photosensitive of Schottky diodes using SrO interfaced layer in MIS structure for optoelectronic applications

[1]  C. E. Benouis,et al.  Photovoltaic parameters and computational spectroscopic investigation of third order nonlinear optical of CuPc/Si organic diode , 2022, Optical Materials.

[2]  L. P. Purohit,et al.  Performance of RF sputtered V2O5 interface layer in p-type CdTe/Ag Schottky diode , 2022, Optical Materials.

[3]  Ş. Karataş,et al.  Performance of the illumination dependent electrical and photodiode characteristic of the Al/(GO:PTCDA)/p-Si structures , 2022, Optical Materials.

[4]  Rana K. Abdulnabi,et al.  Preparation of MAPbI3 perovskite film by pulsed laser deposition for high-performance silicon-based heterojunction photodetector , 2022, Optical Materials.

[5]  Gunjan Yadav,et al.  Electroluminescence study of InGaN/GaN QW based p-i-n and inverted p-i-n junction based short-wavelength LED device using laser MBE technique , 2022, Optical Materials.

[6]  M. Zhao,et al.  The impact of Ga and S concentration and gradient in Cu(In,Ga)(Se,S)2 solar cells , 2022, Optical Materials.

[7]  S. Özçelik,et al.  The electrical characteristic of an MIS structure with biocompatible minerals doped (Brushite + Monetite: PVC) interface layer , 2022, Microelectronic Engineering.

[8]  Sushil Kumar,et al.  Numerical simulation of novel designed perovskite/silicon heterojunction solar cell , 2022, Optical Materials.

[9]  M. Shahbazi,et al.  Study of optical and structural properties of GO and MnO2-GO hybrid fabricated by spray pyrolysis technique , 2022, Optical Materials.

[10]  T. Serin,et al.  Identification of Current Transport Mechanisms and Temperature Sensing Qualifications for Al/(ZnS-PVA)/p-Si Structures at Low and Moderate Temperatures , 2022, IEEE Sensors Journal.

[11]  Mohd Ubaidullah,et al.  Dielectric relaxation, electrical conductivity measurements, electric modulus and impedance analysis of WO3 nanostructures , 2021 .

[12]  S. Özçelik,et al.  Comparison of the electrical and impedance properties of Au/(ZnOMn:PVP)/n-Si (MPS) type Schottky-diodes (SDs) before and after gamma-irradiation , 2021, Physica Scripta.

[13]  M.I. Khan,et al.  Effect of Fe ions beam on the structural, optical, photovoltaic properties of TiO2 based dye-sensitized solar cells , 2021, Optical Materials.

[14]  J. Chandrasekaran,et al.  Fabrication of strontium included hafnium oxide thin film based Al/Sr:HfO2/n-Si MIS-Schottky barrier diodes for tuned electrical behavior , 2021, New Journal of Chemistry.

[15]  J. Chandrasekaran,et al.  Upgraded photosensitivity under the influence of Yb doped on V2O5 thin films as an interfacial layer in MIS type Schottky barrier diode as photodiode application , 2021 .

[16]  Y. Azizian-Kalandaragh,et al.  Effect of (Co–TeO2-doped polyvinylpyrrolidone) organic interlayer on the electrophysical characteristics of Al/p-Si (MS) structures , 2021, Journal of Materials Science: Materials in Electronics.

[17]  O. Surucu,et al.  Illumination and voltage effects on the forward and reverse bias current–voltage (I-V) characteristics in In/In2S3/p-Si photodiodes , 2021, Journal of Materials Science: Materials in Electronics.

[18]  J. Chandrasekaran,et al.  Improved photodetector performance of high-k dielectric material (La) doped V2O5 thin films as an interfacial layer in Schottky barrier diodes , 2021, Surfaces and Interfaces.

[19]  Dhananjaya Kekuda,et al.  Property evaluation of spin coated Al doped ZnO thin films and Au/AZO/FTO Schottky diodes , 2021, Superlattices and Microstructures.

[20]  Y. Azizian-Kalandaragh,et al.  Evaluation of gamma-irradiation effects on the electrical properties of Al/(ZnO-PVA)/p-Si type Schottky diodes using current-voltage measurements , 2021, Radiation Physics and Chemistry.

[21]  J. Chandrasekaran,et al.  Effect of surface modification of WO3 nanostructures on the performance for p-Si/n-WO3 structure diodes , 2021 .

[22]  J. Chandrasekaran,et al.  Incorporation of Zn ions on high dielectric HfO2 thin films by spray pyrolysis and fabrication of Al/Zn@HfO2/n-Si Schottky barrier diodes , 2021 .

[23]  A. Tataroğlu,et al.  Electrical characterization of Au/n-Si (MS) diode with and without graphene-polyvinylpyrrolidone (Gr-PVP) interface layer , 2021, Journal of Materials Science: Materials in Electronics.

[24]  S. Özçelik,et al.  A comparison of electrical characteristics of Au/n-Si (MS) structures with PVC and (PVC: Sm2O3) polymer interlayer , 2021, Physica Scripta.

[25]  F. Yakuphanoglu,et al.  Synthesis, electrical and photo-sensing characteristics of the Al/(PCBM/NiO: ZnO)/p-Si nanocomposite structures , 2021 .

[26]  Tien Dai Nguyen,et al.  Colossal photosensitive boost in Schottky diode behaviour with Ce-V2O5 interfaced layer of MIS structure , 2020 .

[27]  J. Chandrasekaran,et al.  Influence of rare earth doping concentrations on the properties of spin coated V2O5 thin films and Cu/Nd-V2O5/n-Si Schottky barrier diodes , 2020, Inorganic Chemistry Communications.

[28]  Y. Azizian-Kalandaragh,et al.  A comparative study on the electrical properties and conduction mechanisms of Au/n-Si Schottky diodes with/without an organic interlayer , 2020, Journal of Materials Science: Materials in Electronics.

[29]  F. Yakuphanoglu,et al.  Illumination Dependent Electrical Data Identification of the CdZnO Interlayered Metal-Semiconductor Structures , 2020, Silicon.

[30]  J. Chandrasekaran,et al.  Zirconia modified nanostructured MoO3 thin films deposited by spray pyrolysis technique for Cu/MoO3-ZrO2/p-Si structured Schottky barrier diode application , 2019 .

[31]  J. Chandrasekaran,et al.  Incorporation of Ba2+ ions on the properties of MoO3 thin films and fabrication of positive photo-response Cu/Ba–MoO3/p-Si structured diodes , 2019, Superlattices and Microstructures.

[32]  J. Chandrasekaran,et al.  Impact of Annealing Temperature on Spin Coated V2O5 Thin Films as Interfacial Layer in Cu/V2O5/n-Si Structured Schottky Barrier Diodes , 2019, Journal of Inorganic and Organometallic Polymers and Materials.

[33]  J. Chandrasekaran,et al.  Jet Nebulizer Sprayed WO3-Nanoplate Arrays for High-Photoresponsivity Based Metal–Insulator–Semiconductor Structured Schottky Barrier Diodes , 2019, Journal of Inorganic and Organometallic Polymers and Materials.

[34]  J. Chandrasekaran,et al.  Ultra-high photoresponse with superiorly sensitive metal-insulator-semiconductor (MIS) structured diodes for UV photodetector application , 2019, Applied Surface Science.

[35]  J. Chandrasekaran,et al.  Impact of Phase Transformation in WO3 Thin Films at Higher Temperature and its Compelling Interfacial Role in Cu/WO3/p–Si Structured Schottky Barrier Diodes , 2019, Zeitschrift für Physikalische Chemie.

[36]  Ç. Güçlü,et al.  Investigation of temperature dependent negative capacitance in the forward bias C-V characteristics of (Au/Ti)/Al2O3/n-GaAs Schottky barrier diodes (SBDs) , 2019, Materials Science in Semiconductor Processing.

[37]  J. Chandrasekaran,et al.  Impact of Zr content on multiphase zirconium–tungsten oxide (Zr–WOx) films and its MIS structure of Cu/Zr–WOx/p-Si Schottky barrier diodes , 2018, Journal of Materials Science: Materials in Electronics.

[38]  T. Balamurugan,et al.  Facile synthesis of orthorhombic strontium copper oxide microflowers for highly sensitive nonenzymatic detection of glucose in human blood , 2017 .

[39]  I. Uslu,et al.  Analysis of electrical characteristics and conduction mechanisms in the Al/(%7 Zn-doped PVA)/p-Si (MPS) structure at room temperature , 2017, Journal of Materials Science: Materials in Electronics.

[40]  J. Chandrasekaran,et al.  Impact of annealing treatment on structural and dc electrical properties of spin coated tungsten trioxide thin films for Si/WO3/Ag junction diode , 2016 .

[41]  J. Chandrasekaran,et al.  Role of substrate temperature on MoO3 thin films by the JNS pyrolysis technique for P–N junction diode application , 2016 .

[42]  T. Asar,et al.  Investigation of dielectric relaxation and ac electrical conductivity using impedance spectroscopy method in (AuZn)/TiO2/p-GaAs(1 1 0) schottky barrier diodes , 2015 .

[43]  D. E. Yıldız,et al.  Analysis of temperature dependent current-conduction mechanisms in Au/TiO2/n-4H-SiC (metal/insulator/semiconductor) type Schottky barrier diodes , 2014 .

[44]  H. Mohamed.  p-Type transparent conducting copper-strontium oxide thin films for optoelectronic devices , 2011 .

[45]  M. Modreanu,et al.  Properties of strontium copper oxide (SCO) deposited by PLD using the 308 nm laser and formation of SCO/Si heterostructures , 2010 .

[46]  A. Turut,et al.  Current–voltage characteristics of Al/Rhodamine-101/n-GaAs structures in the wide temperature range , 2010 .

[47]  S. Altindal,et al.  A detailed study of current-voltage characteristics in Au/SiO2/n-GaAs in wide temperature range , 2009, Microelectron. Reliab..

[48]  D. W. Readey,et al.  Preparation and characterization of sol–gel derived copper–strontium–oxide thin films , 2008 .