论文信息 - High Breakdown Voltage AlGaN/GaN HEMT with Graded Fluorine Ion Implantation Terminal in Thick Passivation Layer - 字舞流文

High Breakdown Voltage AlGaN/GaN HEMT with Graded Fluorine Ion Implantation Terminal in Thick Passivation Layer

Kemeng Yang | Bo Zhang | S. Deng | Q. Jiang | T. Sun | Jie Wei | X. Luo | Yanjiang Jia | Lufan Xi | Zhuolin Jiang