Theoretical description of H behavior in GaN p-n junctions

The diffusion and reactions of hydrogen in GaN are described by applying differential equations for the concentration profiles of H species, charged dopants, and carriers with simultaneous solution of Poisson’s equation. This approach dispenses with the simplifying assumptions of local equilibrium among states and local charge neutrality that were employed previously by us to treat high-temperature H behavior in uniform layers. The result is a more general modeling capability which encompasses nonequilibrium conditions and space-charge effects such as are encountered in devices. Density-functional theory, previously used by us to treat equilibrium H energies, is employed herein to examine activation barriers and wave-function overlaps affecting the rates of relevant H and carrier reactions, thereby guiding the selection of mechanisms to be included and influencing the evaluation of some rate parameters. The model is applied to H-containing p-n junctions, with detailed consideration of the reversible, meta...

[1]  K. Brennan,et al.  Electron transport characteristics of GaN for high temperature device modeling , 1998 .

[2]  F. Bechstedt,et al.  Ab initio study of structural, dielectric, and dynamical properties of GaN , 1998 .

[3]  William R. Wampler,et al.  Diffusion, release, and uptake of hydrogen in magnesium-doped gallium nitride: Theory and experiment , 2001 .

[4]  C. Naud,et al.  Infrared spectroscopy of Mg-H local vibrational mode in GaN with polarized light , 2000 .

[5]  Andrei Osinsky,et al.  Electron beam-induced increase of electron diffusion length in p-type GaN and AlGaN/GaN superlattices , 2000 .

[6]  M. G. Cheong,et al.  Hole transport in Mg-doped GaN epilayers grown by metalorganic chemical vapor deposition , 2000 .

[7]  S. Pearton,et al.  Minority‐carrier‐enhanced reactivation of hydrogen‐passivated Mg in GaN , 1996 .

[8]  R. Street,et al.  Activation of acceptors in Mg-doped GaN grown by metalorganic chemical vapor deposition , 1996 .

[9]  S. Denbaars,et al.  Heavy doping effects in Mg-doped GaN , 2000 .

[10]  James J. Coleman,et al.  Time‐dependent study of low energy electron beam irradiation of Mg‐doped GaN grown by metalorganic chemical vapor deposition , 1996 .

[11]  Direct patterning of the current confinement structure for p-type column-III nitrides by low-energy electron beam irradiation treatment , 1995 .

[12]  William R. Wampler,et al.  Equilibrium state of hydrogen in gallium nitride: Theory and experiment , 2000 .

[13]  A. F. Wright.  Influence of crystal structure on the lattice sites and formation energies of hydrogen in wurtzite and zinc-blende GaN , 1999 .

[14]  Hiroyuki Ota,et al.  The activation of Mg in GaN by annealing with minority-carrier injection , 1998 .

[15]  Stephen J. Pearton,et al.  GaN PN junction issues and developments , 2000 .

[16]  Tanakorn Osotchan,et al.  Electron mobilities in gallium, indium, and aluminum nitrides , 1994 .

[17]  Van de Walle CG,et al.  Hydrogen in GaN: Novel aspects of a common impurity. , 1995, Physical review letters.

[18]  Frank S. Ham,et al.  Theory of diffusion-limited precipitation , 1958 .

[19]  T. C. McGill,et al.  Electron diffusion length and lifetime in p-type GaN , 1998 .

[20]  H. Grubin.  The physics of semiconductor devices , 1979, IEEE Journal of Quantum Electronics.

[21]  Eugene E. Haller,et al.  Local vibrational modes of the Mg–H acceptor complex in GaN , 1996 .

[22]  D. Vanderbilt,et al.  Hydrogen, acceptors, and H-acceptor complexes in GaN , 1995 .