Metalorganic vapor phase epitaxy InSbp+nn+ photodiodes with low dark current

Photodiodes of InSb were fabricated on epilayers grown by metalorganic vapor phase epitaxy (MOVPE). Dark reverse current density as low as 1×10−7A∕cm2 at −0.1V bias, and zero-bias-resistance area products as high as 1×106Ωcm2 were measured. These values are comparable to the best values reported for InSb diodes grown by molecular-beam epitaxy. The very good uniformity of the diode dark current implies that MOVPE is a promising growth technique for the fabrication of state-of-the-art focal plane InSb detector arrays.