Unipolar resistive switching with forming-free and self-rectifying effects in Cu/HfO2/n-Si devices

One of the most effective methods integrating self-rectifying RRAM is alleviating sneak current in crossbar architecture. In this work, to investigate RRAMs with excellent properties of self-rectifying effect, simple Cu/HfO2/n-Si tri-layer devices are fabricated and investigated through I − V characteristic measurement. The experimental results demonstrate that the device exhibits forming-free behavior and a remarkable rectifying effect in low resistance state (LRS) with rectification ratio of 104 at ±1 V, as well as considerable OFF/ON ratio (resistive switching window) of 104 at 1 V. The formation and annihilation of localized Cu conductive filament plays a key role in the resistive switching between low resistance state (LRS) and high resistance state (HRS). In addition, intrinsic rectifying effect in LRS attributes to the Schottky contact between Cu filament and n-Si electrode. Furthermore, satisfactory switching uniformity of cycles and devices is observed. As indicated by the results, Cu/HfO2/n-Si devices have a high potential for high-density storage practical application due to its excellent properties.

[1]  Umesh Chand,et al.  Investigation of thermal stability and reliability of HfO2 based resistive random access memory devices with cross-bar structure , 2015 .

[2]  Fei Zeng,et al.  Tuning the switching behavior of binary oxide-based resistive memory devices by inserting an ultra-thin chemically active metal nanolayer: a case study on the Ta2O5-Ta system. , 2015, Physical chemistry chemical physics : PCCP.

[3]  Fei Zeng,et al.  Forming-free and self-rectifying resistive switching of the simple Pt/TaOx/n-Si structure for access device-free high-density memory application. , 2015, Nanoscale.

[4]  F. Zeng,et al.  Recent progress in resistive random access memories: Materials, switching mechanisms, and performance , 2014 .

[5]  O. Kim,et al.  Improvement of switching uniformity in HfOx-based resistive random access memory with a titanium film and effects of titanium on resistive switching behaviors , 2014 .

[6]  Yuchao Yang,et al.  Nanoscale resistive switching devices: mechanisms and modeling. , 2013, Nanoscale.

[7]  Wilfried Vandervorst,et al.  Influence of carbon alloying on the thermal stability and resistive switching behavior of copper-telluride based CBRAM cells. , 2013, ACS applied materials & interfaces.

[8]  F. Zeng,et al.  Resistive switching with self-rectifying behavior in Cu/SiOx/Si structure fabricated by plasma-oxidation , 2013 .

[9]  Zongliang Huo,et al.  Bipolar one diode-one resistor integration for high-density resistive memory applications. , 2013, Nanoscale.

[10]  Jong-Ho Lee,et al.  32 × 32 Crossbar Array Resistive Memory Composed of a Stacked Schottky Diode and Unipolar Resistive Memory , 2013 .

[11]  D Ielmini,et al.  Multiple Memory States in Resistive Switching Devices Through Controlled Size and Orientation of the Conductive Filament , 2013, Advanced materials.

[12]  G. Lo,et al.  Fully CMOS-Compatible 1T1R Integration of Vertical Nanopillar GAA Transistor and Oxide-Based RRAM Cell for High-Density Nonvolatile Memory Application , 2013, IEEE Transactions on Electron Devices.

[13]  Fei Zeng,et al.  Programmable complementary resistive switching behaviours of a plasma-oxidised titanium oxide nanolayer. , 2013, Nanoscale.

[14]  Xiao Wei Sun,et al.  A Self-Rectifying Unipolar HfOx Based RRAM Using Doped Germanium Bottom Electrode , 2013 .

[15]  W. J. Liu,et al.  Self-Selection Unipolar $\hbox{HfO}_{x}$ -Based RRAM , 2013, IEEE Transactions on Electron Devices.

[16]  Byoung Hun Lee,et al.  Self‐formed Schottky barrier induced selector‐less RRAM for cross‐point memory applications , 2012 .

[17]  W. J. Liu,et al.  A Self-Rectifying $\hbox{AlO}_{y}$ Bipolar RRAM With Sub-50-$\mu\hbox{A}$ Set/Reset Current for Cross-Bar Architecture , 2012, IEEE Electron Device Letters.

[18]  Investigation of One-Dimensional Thickness Scaling on $ \hbox{Cu/HfO}_{x}/\hbox{Pt}$ Resistive Switching Device Performance , 2012, IEEE Electron Device Letters.

[19]  H. Hwang,et al.  High current density and nonlinearity combination of selection device based on TaO(x)/TiO2/TaO(x) structure for one selector-one resistor arrays. , 2012, ACS nano.

[20]  Fei Zeng,et al.  Dynamic Processes of Resistive Switching in Metallic Filament-Based Organic Memory Devices , 2012 .

[21]  W. Jang,et al.  A study on low-power, nanosecond operation and multilevel bipolar resistance switching in Ti/ZrO2/Pt nonvolatile memory with 1T1R architecture , 2012 .

[22]  Yuchao Yang,et al.  Complementary resistive switching in tantalum oxide-based resistive memory devices , 2012, 1204.3515.

[23]  M. Haemori,et al.  Observation of filament formation process of Cu/HfO_2/Pt ReRAM structure by hard x-ray photoelectron spectroscopy under bias operation , 2012 .

[24]  Yuchao Yang,et al.  Observation of conducting filament growth in nanoscale resistive memories , 2012, Nature Communications.

[25]  Z. R. Wang,et al.  A Self-Rectifying $\hbox{HfO}_{x}$ -Based Unipolar RRAM With NiSi Electrode , 2012, IEEE Electron Device Letters.

[26]  Z. S. Wang,et al.  Bipolar resistive switching with self-rectifying effects in Al/ZnO/Si structure , 2012 .

[27]  M. Haemori,et al.  Bias application hard x-ray photoelectron spectroscopy study of forming process of Cu/HfO2/Pt resistive random access memory structure , 2011 .

[28]  Dashan Shang,et al.  Improved resistance switching in ZnO-based devices decorated with Ag nanoparticles , 2011 .

[29]  D. Jeong,et al.  Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook , 2011, Nanotechnology.

[30]  T. Hou,et al.  Electrode dependence of filament formation in HfO2 resistive-switching memory , 2011 .

[31]  H. Hwang,et al.  TiO2-based metal-insulator-metal selection device for bipolar resistive random access memory cross-point application , 2011 .

[32]  Yuchao Yang,et al.  Bipolar resistive switching in Cu/AlN/Pt nonvolatile memory device , 2010 .

[33]  Rainer Waser,et al.  Complementary resistive switches for passive nanocrossbar memories. , 2010, Nature materials.

[34]  Yan Wang,et al.  Self-rectifying effect in gold nanocrystal-embedded zirconium oxide resistive memory , 2009 .

[35]  R. Dittmann,et al.  Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges , 2009, Advanced materials.

[36]  M. Haemori,et al.  Impact of Cu Electrode on Switching Behavior in a Cu/HfO2/Pt Structure and Resultant Cu Ion Diffusion , 2009 .

[37]  Wei Lu,et al.  Si/a-Si core/shell nanowires as nonvolatile crossbar switches. , 2008, Nano letters.

[38]  S. Menzel,et al.  Understanding the switching-off mechanism in Ag+ migration based resistively switching model systems , 2007 .

[39]  S. Sze,et al.  Physics of Semiconductor Devices: Sze/Physics , 2006 .

[40]  Tu,et al.  Schottky-barrier behavior of copper and copper silicide on n-type and p-type silicon. , 1990, Physical review. B, Condensed matter.