论文信息 - All-optical switching in an asymmetric silicon Fabry-Perot étalon based on the free-carrier plasma effect.

All-optical switching in an asymmetric silicon Fabry-Perot étalon based on the free-carrier plasma effect.

We demonstrate all-optical switching at 1.3 and 1.5 µm in the reflection mode of an asymmetric silicon Fabry-Perot étalon by a control beam at 0.85 µm. Both switch-on and switch-off operations are demonstrated at different locations of the etalon. Based on the free-carrier plasma effect, a modulation depth as large as 10% is obtained and a frequency response as high as 0.5 GHz is achieved.

Y M Liu | P R Prucnal | X Xiao | J C Sturm

[1] B.R. Hemenway,et al. A polarization-independent silicon light intensity modulator for 1.32 mu m fiber optics , 1990, IEEE Photonics Technology Letters.

[2] Ivo Rendina,et al. Thermo-optical modulation at 1.5 mu m in silicon etalon , 1992 .

[3] All-optical silicon-based integrated fiber-optic modulator, logic gate, and self-limiter , 1988 .

[4] H. Gibbs,et al. Optical modulation by optical tuning of a cavity , 1979 .

[5] W. M. Bullis,et al. Properties of gold in silicon , 1966 .

[6] Jean-Marc Halbout,et al. Silicon Mach–Zehnder waveguide interferometers based on the plasma dispersion effect , 1991 .

[7] Jean-Marc Halbout,et al. Silicon germanium optical waveguides with 0-5 dB/cm losses for singlemode fibre optic systems , 1992 .

[8] Deeply-etched singlemode GeSi RIB waveguides for silicon-based optoelectronic integration , 1992 .

[9] J.C. Sturm,et al. Fabry-Perot optical intensity modulator at 1.3 mu m in silicon , 1991, IEEE Photonics Technology Letters.

[10] R. Soref,et al. Electrooptical effects in silicon , 1987 .