论文信息 - High-efficiency monolithic GaAs power MESFET amplifier operating with a single low voltage supply for 1.9-GHz digital mobile communication applications

High-efficiency monolithic GaAs power MESFET amplifier operating with a single low voltage supply for 1.9-GHz digital mobile communication applications

A monolithic GaAs power amplifier IC using refractory WN/sub xW self-aligned gate power MESFETs has been developed for 1.9-GHz digital mobile communication systems, such as the Japanese personal handy phone system. The power amplifier operates with high efficiency and low distortion with a single low voltage supply of 2.7-3.0 V, by virtue of small drain knee voltage, high transconductance and sufficient breakdown voltage of the power MESFET. An output power of 23.7 dBm and a high power-added efficiency of 24.2% were attained at 3 V for 1.9-GHz /spl pi4-shifted QPSK (quadrature phase shift keying) modulated input when adjacent channel leakage power was -58 dBc at 600 kHz apart.<<ETX>>

[1] Tetsuro Sawai,et al. A High Power-Added Efficiency GaAs Power MESFET and MMIC Operating at a Very Low Drain Bias for Use in Personal Handy Phones (Special Issue on Microwave and Millimeter-Wave Technology for Advanced Functioions and Size-Reductions) , 1993 .

[2] T. Matsunaga,et al. Production-oriented 0.35-μWN_x/W-gate BPLDD MESFETs for ultra-high-speed ICs at 10 GHz and above , 1993 .

[3] Masakatsu Mihara,et al. A Refractory WNx/W Self-Aligned Gate GaAs Power MESFET for 1.9-GHz Digital Mobile Communication System Operating with a Single Low Voltage Supply , 1993 .