Test structures for characterization of electrooptic waveguide modulators in lithium niobate

A method of determining the critical parameters of waveguide modulators, using a set of test devices fabricated on a single chip, is presented. The five parameters are the depth and lateral Ti diffusion lengths, the peak index change in the waveguides, the electrooptic coefficient, and the buffer layer dielectric constant. The finite element method is used for calculation of optical modes in waveguides with graded refractive index profiles. The integral equation method is used for calculation of the static electric field due to electrodes in a three-layer structure of air, buffer layer, and LiNbO/sub 3/. The test set includes a planar waveguide, Mach-Zehnder modulators, symmetrically perturbed directional couplers, and widened X modulators. Several test chips have been fabricated using different fabrication conditions. The parameter values determined using this method are compared with those reported by other authors. >