Temperature dependence of heavy ion induced current transients in Si epilayer devices

We report on the temperature dependence of the heavy ion Transient-Ion Beam Induced Current response of Si epilayer devices from 80K to 300K. The measurements were performed on a heavy ion micro-beam in conjunction with the new Transient-Ion Beam Induced Current system developed at JAERI. Furthermore, we perform a detailed comparison with TCAD simulations and discuss the results in terms of TCAD modeling, experimental procedure and the implications for temperature related SEU modeling.

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