论文信息 - Two-domain formation during the epitaxial growth of GaN (0001) on c-plane Al2O3 (0001) by high power impulse magnetron sputtering - 字舞流文

Two-domain formation during the epitaxial growth of GaN (0001) on c-plane Al2O3 (0001) by high power impulse magnetron sputtering

Kuei-Hsien Chen | L. Hultman | L. C. Chen | J. Birch | U. Helmersson | P. Persson | V. Darakchieva | D. Lundin | J. Jensen | J. Palisaitis | C. Hsiao | M. Junaid | W.-J. Lai | P. Sandström