FinFET-based 11T sub-threshold SRAM with improved stability and power

[1]  M. Gholipour,et al.  Design of a Highly Stable and Robust 10T SRAM Cell for Low-Power Portable Applications , 2022, Circuits, Systems, and Signal Processing.

[2]  M. Gholipour,et al.  Robust transmission gate-based 10T subthreshold SRAM for internet-of-things applications , 2022, Semiconductor Science and Technology.

[3]  M. Gholipour,et al.  Correction: A 9T high-stable and Low-Energy Half-Select-Free SRAM Cell Design using TMDFETs , 2022, Analog Integrated Circuits and Signal Processing.

[4]  M. Gholipour,et al.  Ultra-low-power and stable 10-nm FinFET 10T sub-threshold SRAM , 2022, Microelectron. J..

[5]  M. Gholipour,et al.  A Schmitt-Trigger-Based Low-Voltage 11 T SRAM Cell for Low-Leakage in 7-nm FinFET Technology , 2022, Circuits, Systems, and Signal Processing.

[6]  E. Abiri,et al.  A Write Bit-Line Free Sub-threshold SRAM Cell with Fully Half-Select Free Feature and High Reliability for Ultra-Low Power Applications , 2021, AEU - International Journal of Electronics and Communications.

[7]  Ebrahim Abiri,et al.  A robust and write bit-line free sub-threshold 12T-SRAM for ultra low power applications in 14 nm FinFET technology , 2021, Microelectron. J..

[8]  Morteza Gholipour,et al.  Design of a Schmitt-Trigger-Based 7T SRAM cell for variation resilient Low-Energy consumption and reliable internet of things applications , 2021, AEU - International Journal of Electronics and Communications.

[9]  Morteza Gholipour,et al.  Half-select disturb-free single-ended 9-transistor SRAM cell with bit-interleaving scheme in TMDFET technology , 2021, Microelectron. J..

[10]  Morteza Gholipour,et al.  Single‐ended half‐select disturb‐free 11T static random access memory cell for reliable and low power applications , 2021, Int. J. Circuit Theory Appl..

[11]  Ashish Sachdeva,et al.  A Schmitt-trigger based low read power 12T SRAM cell , 2020, Analog Integrated Circuits and Signal Processing.

[12]  M. Gholipour,et al.  A variation-aware design for storage cells using Schottky-barrier-type GNRFETs , 2020 .

[13]  Nima Eslami,et al.  A single-ended low leakage and low voltage 10T SRAM cell with high yield , 2020, Analog Integrated Circuits and Signal Processing.

[14]  Santosh Kumar Vishvakarma,et al.  An improved read-assist energy efficient single ended P-P-N based 10T SRAM cell for wireless sensor network , 2019, Microelectron. J..

[15]  Kari Halonen,et al.  A write‐improved low‐power 12T SRAM cell for wearable wireless sensor nodes , 2018, Int. J. Circuit Theory Appl..

[16]  Aminul Islam,et al.  Design of differential TG based 8T SRAM cell for ultralow-power applications , 2018, Microsystem Technologies.

[17]  Shaahin Hessabi,et al.  A robust and low-power near-threshold SRAM in 10-nm FinFET technology , 2018 .

[18]  Ashish Sachdeva,et al.  Design of multi-cell upset immune single-end SRAM for low power applications , 2021 .