论文信息 - Gain-Bandwidth Limitations of 0.18μm Si-CMOS RF technology

Gain-Bandwidth Limitations of 0.18μm Si-CMOS RF technology

In this paper, gain bandwidth limitations of a regularly processed 0.18 mum Si CMOS FET is investigated over the frequency band of 450 MHz-10 GHz. It is exhibited that 0.18 mum Si CMOS processing technology can safely be utilized to manufacture ultra wideband RF-amplifiers for commercial wireless communication systems placed silicon chips up to X-Band.

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