Understanding EUV-induced plasma and application to particle contamination control in EUV scanners

With the introduction of the NXE:3400B scanner, ASML has brought EUV to High-Volume Manufacturing (HVM). In this context, ASML is pursuing a dual-path approach towards zero reticle defectivity: EUVcompatible pellicle or zero particles towards reticle by advanced particle contamination control. This paper will focus primarily on the approach of advanced particle contamination control and on the understanding of EUV-induced plasma to control both release and transport of particles within the scanner. This paper will present our advancements in understanding and control of particle forces related to the EUV-induced plasma, for EUV sources up to 250W and beyond. This will combine models and simulations with off-line experiments as well as in-situ scanner tests. It will be shown that our understanding of the underlying mechanisms of plasma-induced release and transport of <1um particles enables us to manage defectivity levels down to be compatible with HVM requirements for sub-10nm node lithography.

[1]  A. Lichtenberg,et al.  Principles of Plasma Discharges and Materials Processing , 1994 .

[2]  A Dolgov,et al.  Characterization of carbon contamination under ion and hot atom bombardment in a tin-plasma extreme ultraviolet light source , 2015 .

[3]  M. A. van de Kerkhof,et al.  Lithography for now and the future , 2019, Solid-State Electronics.

[4]  T. V. D. Ven.  Ion fluxes towards surfaces exposed to EUV-induced plasmas , 2018 .

[5]  W. Peukert,et al.  Particle adhesion force distributions on rough surfaces. , 2004, Langmuir : the ACS journal of surfaces and colloids.

[6]  Lcj Luuk Heijmans.  Quantifying plasma particle lofting , 2017 .

[7]  Judon Stoeldraijer,et al.  EUV lithography performance for manufacturing: status and outlook , 2016, SPIE Advanced Lithography.

[8]  Howard A. Perko.  Surface Cleanliness Based Dust Adhesion Model , 1998 .

[9]  C. García-Rosales,et al.  CORRIGENDUM: Analytic description of the chemical erosion of graphite by hydrogen ions , 1996 .

[10]  E. Louis.  Physics and technology development of multilayer EUV reflective optics , 2007 .

[11]  J. Goree,et al.  Dust release from surfaces exposed to plasma , 2006 .

[12]  Y. Yamamura,et al.  ENERGY DEPENDENCE OF ION-INDUCED SPUTTERING YIELDS FROM MONATOMIC SOLIDS AT NORMAL INCIDENCE , 1996 .

[13]  van der Horst,et al.  Electron dynamics in EUV-induced plasmas , 2015 .

[14]  Peter Beike,et al.  Intermolecular And Surface Forces , 2016 .

[15]  C. Hopf,et al.  Chemical sputtering of hydrocarbon films , 2003 .

[16]  Mark van de Kerkhof,et al.  Advanced particle contamination control in EUV scanners , 2019, Advanced Lithography.

[17]  Hans Meiling,et al.  EUV for HVM: towards an industrialized scanner for HVM NXE3400B performance update , 2018, Advanced Lithography.