论文信息 - A 230 watt S-band SiGe HBT

A 230 watt S-band SiGe HBT

Large-area Si/Si/sub 1-x/Ge/sub x/ HBTs were demonstrated with record output power at S-Band. Under pulsed conditions in class C operation, >230 W saturated power was achieved at 2.8 GHz. At 200 W the device exhibited a collector efficiency of 46% and a power gain of 6.9 dB. Devices with implanted Si bases had comparable gain and 35% efficiency at 150 W, but saturated at 180 W. For high f/sub max/ a self-aligned silicided polysilicon-emitter structure was used in conjunction with a graded Si/sub 1-x/Ge/sub x/ base. The results indicate for the first time that Si/SiGe HBTs are suitable for high power, high frequency applications.

Fritz J. Kub | K. J. Petrosky | Phillip E. Thompson | Karl D. Hobart | P. A. Potyraj

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