Radio Frequency Performance of Hetero-Gate-Dielectric Tunneling Field-Effect Transistors

Radio frequency (RF) performances of hetero-gate-dielectric tunneling field-effect transistors (HG TFETs) have been compared with those of SiO2-only and high-k-only TFETs in terms of fT, fmax, gate capacitance, channel resistance, and transconductance. HG TFETs can have higher fT/fmax and smaller switching time than SiO2-only TFETs and high-k-only TFETs because they have higher gm and current drivability than SiO2-only TFET and smaller gate capacitance than high-k-only TFET.

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