Long-wavelength fast semiconductor saturable absorber mirrors using metamorphic growth on GaAs substrates

Metamorphic growth of InP on GaAs has been used to decrease the absorption recovery time of 1.55μm semiconductor saturable absorber mirrors. We show that the recovery time can be reliably controlled by changing the thickness of an InP “lattice reformation layer” grown between the GaAs-based distributed Bragg reflector and the active region. Semiconductor saturable absorber mirrors with a thickness of the InP reformation layer around 200 nm or smaller exhibit a recovery time short enough to reliably mode-lock fiber lasers.

[1]  Akira Hirano,et al.  10 Gbit/s RZ all-optical discrimination using refined saturable absorber optical gate , 1998 .

[2]  Martin Koch,et al.  Short cavity erbium/ytterbium fiber lasers mode-locked with a saturable Bragg reflector , 1997 .

[3]  Joe C. Campbell,et al.  InGaAs PIN photodiodes grown on GaAs substrates by metal organic vapour phase epitaxy , 1987 .

[4]  D. Miller,et al.  Solid-state low-loss intracavity saturable absorber for Nd:YLF lasers: an antiresonant semiconductor Fabry-Perot saturable absorber. , 1992, Optics letters.

[5]  Willem L. Vos,et al.  Spatial homogeneity of optically switched semiconductor photonic crystals and of bulk semiconductors , 2005 .

[6]  J. Whitaker,et al.  Ultrafast carrier dynamics in III-V semiconductors grown by molecular-beam epitaxy at very low substrate temperatures , 1992 .

[7]  Soon Fatt Yoon,et al.  Metamorphic InP/InGaAs double-heterojunction bipolar transistors on GaAs grown by molecular-beam epitaxy , 2000 .

[8]  L. Qian,et al.  Subpicosecond carrier lifetime in beryllium-doped lnGaAsP grown by He-plasma-assisted molecular beam epitaxy , 1997, CLEO '97., Summaries of Papers Presented at the Conference on Lasers and Electro-Optics.

[9]  Oleg G. Okhotnikov,et al.  Effect of amplified spontaneous emission and absorber mirror recovery time on the dynamics of mode-locked fiber lasers , 2005 .

[10]  Alexandre Shen,et al.  Ultrafast excitonic saturable absorption in ion-implanted InGaAs/InAlAs multiple quantum wells , 1998 .

[11]  Oleg G. Okhotnikov,et al.  Semiconductor mirror for optical noise suppression and dynamic dispersion compensation , 2003 .