Transport and cyclotron resonance theory for GaAs-AlGaAs heterostructures
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[1] Goetze,et al. Localization and screening anomalies in two-dimensional systems. , 1986, Physical review. B, Condensed matter.
[2] K. Klitzing,et al. Density of states in a two-dimensional electron gas in a strong magnetic field , 1985 .
[3] Gold. Conductivity, plasmon, and cyclotron-resonance anomalies in Si(100) metal-oxide-semiconductor systems. , 1985, Physical review. B, Condensed matter.
[4] Ploog,et al. Nonlocality in the two-dimensional plasmon dispersion. , 1985, Physical review letters.
[5] Strasser,et al. Specific heat of two-dimensional electrons in GaAs-GaAlAs multilayers. , 1985, Physical review letters.
[6] A. Gossard. Two-dimensional electron gas systems at semiconductor interfaces , 1985 .
[7] Yoshino,et al. Mobility modulation of the two-dimensional electron gas via controlled deformation of the electron wave function in selectively doped AlGaAs-GaAs heterojunctions. , 1985, Physical review letters.
[8] Halperin,et al. Many-body effects on the cyclotron resonance in a two-dimensional electron gas. , 1985, Physical review. B, Condensed matter.
[9] G. Weimann,et al. Molecular beam epitaxial growth and transport properties of modulation‐doped AlGaAs‐GaAs heterostructures , 1985 .
[10] B. Halperin,et al. Excitations from a filled Landau level in the two-dimensional electron gas , 1984 .
[11] W. Walukiewicz,et al. Electron mobility in modulation-doped heterostructures , 1984 .
[12] James C. M. Hwang,et al. Cyclotron resonance in two dimensions , 1984 .
[13] S. Hiyamizu,et al. Cyclotron resonance of two-dimensional electrons in AlxGa1−xAs/GaAs heterojunction , 1984 .
[14] A. Kastalsky,et al. Transport properties of selectively doped GaAs‐(AlGa)As heterostructures grown by molecular beam epitaxy , 1984 .
[15] F. Kuchar,et al. Two-dimensional systems, heterostructures, and superlattices , 1984 .
[16] F. Stern. Doping considerations for heterojunctions , 1983 .
[17] S. Hiyamizu,et al. Improved Electron Mobility Higher than 106 cm2/Vs in Selectively Doped GaAs/N-AlGaAs Heterostructures Grown by MBE , 1983 .
[18] E. Gornik,et al. Calculation of the cyclotron resonance linewidth in GaAsAlGaAs heterostructures , 1983 .
[19] James C. M. Hwang,et al. Subband-Landau-level coupling in a two-dimensional electron gas , 1983 .
[20] A. Gossard,et al. Observation of oscillatory linewidth in the cyclotron resonance of GaAs-AlxGa1−xAs heterostructures , 1983 .
[21] H. Okabayashi,et al. Degradation Mechanisms on Mo or Mo-silicide/n+ -Si Ohmic Contacts on High Temperature Annealing , 1983 .
[22] T. Ando. Self-Consistent Results for a GaAs/AlxGa1-xAs Heterojunciton. II. Low Temperature Mobility , 1982 .
[23] F. Stern,et al. Electronic properties of two-dimensional systems , 1982 .
[24] S. Hiyamizu,et al. Far-infrared cyclotron resonance of two-dimensional electrons in an AlxGa1−xAs/GaAs heterojunction , 1982 .
[25] Y. Guldner,et al. Cyclotron resonance linewidth in selectively doped GaAs‐AlxGa1−xAs heterojunctions , 1981 .
[26] S. J. Allen,et al. Evidence for a magnetic-field-induced Wigner glass in the two-dimensional electron system in Si inversion layers , 1981 .
[27] T. Theis. Plasmons in inversion layers , 1980 .
[28] W. Götze. An elementary approach towards the Anderson transition , 1978 .
[29] J. Quinn,et al. Theory of cyclotron resonance of interacting electrons in a semiconducting surface inversion layer , 1977 .
[30] M. Jonson. Electron correlations in inversion layers , 1976 .
[31] Pradeep Kumar,et al. Plasma oscillation of a charge layer at an insulator surface , 1976 .
[32] W. Götze,et al. Homogeneous Dynamical Conductivity of Simple Metals , 1972 .
[33] Frank Stern,et al. Polarizability of a Two-Dimensional Electron Gas , 1967 .
[34] Walter Kohn,et al. Cyclotron Resonance and de Haas-van Alphen Oscillations of an Interacting Electron Gas , 1961 .