论文信息 - Electron trapping in thin SiO2 films due to avalanche currents

Electron trapping in thin SiO2 films due to avalanche currents

Abstract The avalanche breakdown phenomenon in silicon results in the injection of charge into silicon dioxide, where it may be partly trapped. Experimental results on the dependence of electron trapping in silicon dioxide on total dose and dose rate (current density) are presented for avalanching MOS drain junctions and capacitors.

Constantine Alois Neugebauer | James F. Burgess | R. E. Joynson | Joseph L. Mundy

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