论文信息 - Nucleation and Growth Behavior of Quaternary-Sputtered Copper Indium Gallium Diselenide Thin Films - 字舞流文

Nucleation and Growth Behavior of Quaternary-Sputtered Copper Indium Gallium Diselenide Thin Films

Vinh Q. Nguyen | Jas S. Sanghera | Sergey Frolov | Jesse A. Frantz | Jason D. Myers | Robel Y. Bekele | Michael Cyrus | Allan J. Bruce

[1] Sumei Huang,et al. Fabrication of Cu(In, Ga)Se2 thin films by sputtering from a single quaternary chalcogenide target , 2011 .

[2] Neelkanth G. Dhere,et al. Toward GW/year of CIGS production within the next decade , 2007 .

[3] John H. Scofield,et al. Sputtered molybdenum bilayer back contact for copper indium diselenide-based polycrystalline thin-film solar cells , 1995 .

[4] J. S. Sanghera,et al. Characterization of Cu(In, Ga)Se2 thin films and devices sputtered from a single target without additional selenization , 2011, 2011 37th IEEE Photovoltaic Specialists Conference.

[5] J. Werner,et al. Initial growth behavior of Cu(In,Ga)Se2 on molybdenum substrates , 2003 .

[6] J. Werner,et al. Grain growth studies of thin Cu(In, Ga)Se2 films , 2004 .

[7] Y. C. Chan,et al. Another route to fabricate single-phase chalcogenides by post-selenization of Cu–In–Ga precursors sputter deposited from a single ternary target , 2009 .

[8] I. Repins,et al. 19·9%‐efficient ZnO/CdS/CuInGaSe2 solar cell with 81·2% fill factor , 2008 .