The effect of hydrogen on the network disorder in hydrogenated amorphous silicon

Previous Raman scattering studies of the effect of hydrogen on the atomic network disorder in various hydrogenated amorphous silicon (a-Si:H) materials resulted in contradicting conclusions. We resolve these contradictions by showing that the surface and the bulk of a-Si:H films can behave differently due to their different hydrogen contents. In particular, we establish that hydrogen has a relatively moderate effect in improving the short-range order but a profound effect in improving the intermediate-range order of the atomic network.

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