Local structure and optical property of GeTe@Cu composite thin film

Nano particle embedded thin film has great potential application in tuning the optical properties of phase change material. In this paper, we prepared GeTe nano particle embedded Cu composite thin film (GeTe@Cu) by magnetic co-sputtering GeTe and Cu targets. High-resolution transmission electron microscopy (HR-TEM) was used to characterize the local structure of the composite thin film and the GeTe nano particles. It was found that the composite thin film was constituted of net-like Cu-Cu bonds, Ge (Te)-Cu bonds as well as GeTe nano particles. Optical reflectivity of the composite thin film was also measured. Ab initio molecular dynamics (AIMD) simulations was employed to investigate the forming mechanism of GeTe nano particles and the local features in detail. Simulation results revealed that Ge-Te-Ge-Te four-fold ring promote the formation of GeTe atom cluster and large amount of free electrons from Cu atoms make the Ge-Te bonds stronger, in further leading to the formation of GeTe nano particles. These results in this paper paved the way for further research about multi-level optical storage of nano particles embedded phase change composite thin film.

[1]  P Fons,et al.  Interfacial phase-change memory. , 2011, Nature nanotechnology.

[2]  Greg Atwood,et al.  Phase-Change Materials for Electronic Memories , 2008, Science.

[3]  S. Elliott,et al.  Microscopic origin of the fast crystallization ability of Ge-Sb-Te phase-change memory materials. , 2008, Nature materials.

[4]  S. Maier,et al.  Hybrid phase-change plasmonic crystals for active tuning of lattice resonances. , 2013, Optics express.

[5]  A. Savin,et al.  Classification of chemical bonds based on topological analysis of electron localization functions , 1994, Nature.

[6]  M. Meyyappan,et al.  Chalcogenide-Nanowire-Based Phase Change Memory , 2008, IEEE Transactions on Nanotechnology.

[7]  Bo Liu,et al.  Investigation of CuSb4Te2 alloy for high-speed phase change random access memory applications , 2012 .

[8]  M. Wuttig,et al.  Phase-change materials for rewriteable data storage. , 2007, Nature materials.

[9]  Hafner,et al.  Ab initio molecular dynamics for liquid metals. , 1995, Physical review. B, Condensed matter.

[10]  Emanuele Rimini,et al.  Chemical and structural arrangement of the trigonal phase in GeSbTe thin films , 2017, Nanotechnology.

[11]  Jung-Sub Wi,et al.  Phase separation behavior of Ge2Sb2Te5 line structure during electrical stress biasing , 2008 .

[12]  Li Yuan,et al.  Improvement of the thermal stability and power consumption of Sb70Se30 through nitrogen doping , 2015, Journal of Materials Science: Materials in Electronics.

[13]  Hafner,et al.  Ab initio molecular dynamics for open-shell transition metals. , 1993, Physical review. B, Condensed matter.

[14]  H. Wong,et al.  Phase change nanodot arrays fabricated using a self-assembly diblock copolymer approach , 2007 .

[15]  Burke,et al.  Generalized Gradient Approximation Made Simple. , 1996, Physical review letters.

[16]  Matthias Wuttig,et al.  Density changes upon crystallization of Ge2Sb2.04Te4.74 films , 2002 .

[17]  E. Ma,et al.  Nature of atomic bonding and atomic structure in the phase-change Ge2Sb2Te5 glass. , 2009, Physical review letters.

[18]  Matthias Wuttig,et al.  Resonant bonding in crystalline phase-change materials. , 2008, Nature materials.

[19]  Songlin Feng,et al.  Study on the Cu-doped Ge2Sb2Te5 for low-power phase change memory , 2014 .

[20]  Fuxi Gan,et al.  Locally formation of Ag nanoparticles in chalcogenide phase change thin films induced by nanosecond laser pulses , 2012 .

[21]  Qiang He,et al.  Continuous controllable amorphization ratio of nanoscale phase change memory cells , 2014 .

[22]  S. Ovshinsky Reversible Electrical Switching Phenomena in Disordered Structures , 1968 .

[23]  Blöchl,et al.  Projector augmented-wave method. , 1994, Physical review. B, Condensed matter.

[24]  Songlin Feng,et al.  Surface etching mechanism of carbon-doped Ge2Sb2Te5 phase change material in fluorocarbon plasma , 2016 .

[25]  Y. Nishi,et al.  Integrating Phase-Change Memory Cell With Ge Nanowire Diode for Crosspoint Memory—Experimental Demonstration and Analysis , 2008, IEEE Transactions on Electron Devices.