Reshaping light: reconfigurable photonics enabled by broadband low-loss optical phase change materials

Optical phase change materials (O-PCMs) are a unique class of materials which exhibit extraordinarily large optical property change (e.g. refractive index change > 1) when undergoing a solid-state phase transition. Traditional O-PCMs suffer from large optical losses even in their dielectric states, which fundamentally limits the performance of optical devices based on the materials. To resolve the issue, we have recently demonstrated a new O-PCM Ge-Sb-Se-Te (GSST) with broadband low loss characteristics. In this talk, we will review an array of reconfigurable photonic devices enabled by the low-loss O-PCM, including nonvolatile waveguide switches with unprecedented low-loss and high-contrast performance, free-space light modulators, bi-stable reconfigurable metasurfaces, and transient couplers facilitating waferscale device probing and characterizations.

[1]  Richard Soref,et al.  Simulations of Silicon-on-Insulator Channel-Waveguide Electrooptical 2 × 2 Switches and 1 × 1 Modulators Using a ${\bf Ge_2}{\bf Sb_2}{\bf Te_5}$ Self-Holding Layer , 2015, Journal of Lightwave Technology.

[2]  C. Pfeiffer,et al.  Metamaterial Huygens' surfaces: tailoring wave fronts with reflectionless sheets. , 2013, Physical review letters.

[3]  Richard A. Soref,et al.  Simulations of Silicon-on-Insulator Channel-Waveguide Electrooptical 2 × 2 Switches and 1 × 1 Modulators Using a Ge 2 Sb 2 Te 5 , 2015 .

[4]  Jerome Michon,et al.  Ultra-thin, High-efficiency Mid-Infrared Transmissive Huygens Meta-Optics , 2017 .

[5]  J. Teng,et al.  Optically reconfigurable metasurfaces and photonic devices based on phase change materials , 2015, Nature Photonics.

[6]  Dae-Hwan Kang,et al.  Investigation of the optical and electronic properties of Ge2Sb2Te5 phase change material in its amorphous, cubic, and hexagonal phases , 2005 .

[7]  Xiaomin Wang,et al.  Ultra-compact, self-holding asymmetric Mach-Zehnder interferometer switch using Ge2Sb2Te5 phase-change material , 2014, IEICE Electron. Express.

[8]  Richard Soref,et al.  Broadband Electro-Optical Crossbar Switches Using Low-Loss Ge2Sb2Se4Te1 Phase Change Material , 2019, Journal of Lightwave Technology.

[9]  Juejun Hu,et al.  Single-Step Deposition of Cerium-Substituted Yttrium Iron Garnet for Monolithic On-Chip Optical Isolation , 2015 .

[10]  C. David Wright,et al.  An optoelectronic framework enabled by low-dimensional phase-change films , 2014, Nature.

[11]  C. Wright,et al.  Nonvolatile All‐Optical 1 × 2 Switch for Chipscale Photonic Networks , 2017 .

[12]  V. Pruneri,et al.  Optical switching at 1.55 μm in silicon racetrack resonators using phase change materials , 2013 .

[13]  Thomas Taubner,et al.  Using low-loss phase-change materials for mid-infrared antenna resonance tuning. , 2013, Nano letters.

[14]  R. Soref,et al.  Broadband nonvolatile photonic switching based on optical phase change materials: beyond the classical figure-of-merit. , 2018, Optics letters.

[15]  W. Marsden I and J , 2012 .

[17]  Harish Bhaskaran,et al.  Integrated all-photonic non-volatile multi-level memory , 2015, Nature Photonics.

[18]  G. G. Stokes "J." , 1890, The New Yale Book of Quotations.

[19]  Hiroyuki Tsuda,et al.  Proposal of a small self-holding 2×2 optical switch using phase-change material , 2008, IEICE Electron. Express.

[20]  S. G. Bishop,et al.  Thermal conductivity of phase-change material Ge2Sb2Te5 , 2006 .