Error analysis in phase extraction in a 2D holographic imaging of semiconductor devices

Backside transient interferometric mapping method is a useful tool for ns-resolution imaging of transient changes in heat energy and free carrier concentration in semiconductor devices during high-energy electrical pulses. In this contribution we investigate the sources of errors in the extracted phase, which are specific to the spatial phase and reflectivity profile of the semiconductor device structure and to the used FFT extraction method. We show that the phase and reflectivity profile of the sample related to the structure of the top layers causes undulations in the phase, thus decreasing the phase extraction precision. To minimize the undulations, an optimal spectrum filter for the FFT method is proposed. In addition, the noise and fringe discontinuities are found to result in defects in the phase profile. In order to isolate these defects time efficiently, a pre-processing of the wrapped phase image is proposed. It effectively reduces the requirement for the unwrapping to a small region. The path independent method or the pixel-queue algorithm is then used for the unwrapping, which do not allow spreading of the defects. The findings are used to make a full-automated evaluation of the phase images.

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