Nanoscale optical critical dimension measurement of a contact hole using deep ultraviolet spectroscopic ellipsometry
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[1] Warren Montgomery,et al. Scatterometry for EUV lithography at the 22-nm node , 2011, Advanced Lithography.
[2] Sheng-Hung Wu,et al. Recess gate process control by using 3D SCD in 3xm vertical DRAM , 2012, Advanced Lithography.
[3] Chih-Hsun Lin,et al. Fast and accurate scatterometry metrology method for STI CMP step height process evaluation , 2012, Advanced Lithography.
[4] Howard Chen,et al. Apply multiple target for advanced gate ADI critical dimension measurement by scatterometry technology , 2012, Advanced Lithography.
[5] T. Gaylord,et al. Rigorous coupled-wave analysis of planar-grating diffraction , 1981 .
[6] T K Gaylord,et al. Diffraction characteristics of photoresist surface-relief gratings. , 1984, Applied optics.
[7] T. Novikova,et al. Application of Mueller polarimetry in conical diffraction for critical dimension measurements in microelectronics. , 2006, Applied optics.
[8] Jo Finders,et al. Towards 22 nm: fast and effective intra-field monitoring and optimization of process windows and CDU , 2011, Advanced Lithography.
[9] Alok Vaid,et al. Use of multiple azimuthal angles to enable advanced scatterometry applications , 2010, Advanced Lithography.
[10] Jaromír Pištora,et al. Convergence properties of critical dimension measurements by spectroscopic ellipsometry on gratings made of various materials , 2006 .