论文信息 - Physical model of BTI, TDDB and SILC in HfO/sub 2/-based high-k gate dielectrics

Physical model of BTI, TDDB and SILC in HfO/sub 2/-based high-k gate dielectrics

The microscopic mechanism of the degradation occurring in HfO/sub 2/-based high-k/IL dual layer gate insulator has been investigated. The hole-injection-induced release of hydrogen from Si-H terminations causes IL-breakdown. This mechanism accelerates NBTI. Defects due to electron-trapped oxygen vacancies are the origin of trap-assisted tunneling, causing SILC in the electron current and PBTI.

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