20‐GHz bandwidth GaAs photodiode
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A high‐speed GaAs Schottky barrier photodiode with 3‐dB bandwidth of 20 GHz, an external quantum efficiency at 600 and 845 nm of ≥25%, and operating at less than 5‐V reverse bias is reported. Accurate characterization of these devices in both the time and the frequency domains is discussed.
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