Analog memory capacitor based on field-configurable ion-doped polymers

A memory capacitor based on a field-configurable ion-doped polymer is reported. The device can be dynamically and reversibly programed to analog capacitances with low-voltage (<5V) pulses. After the device is programed to a specific value, its capacitance remains nonvolatile. The field-configurable capacitance is attributed to the modification of ionic dopant concentrations in the polymer. The memory capacitors might be used for analog memory, nonlinear analog, and neuromorphic circuits.