Quenching of the 750.4 nm argon actinometry line by H2 and several hydrocarbon molecules

The quenching rate of the 750.4 nm actinometer line in argon by H2 and several hydrocarbons (CH4, C2H2, C2H4, C2H6) has been determined. Argon atoms at room temperature are excited by two-photon excitation at 184 nm to the 4p′[1/2]0 state, and the decay time of the fluorescence emission at 750.4 nm is measured. The quenching rates are inferred from the change of the decay time with the pressure of the quenching gas. For hydrocarbons, the quenching rates are of the order of 10−9 cm3 s−1. The radiative lifetime of the 4p′[1/2]0 is found to be 24 ns.

[1]  J. Cui,et al.  Evidence of the role of positive bias in diamond growth by hot filament chemical vapor deposition , 1996 .

[2]  Yurong Ma,et al.  Species characterization for a direct‐current‐biased hot filament growth of diamond using spatial resolved optical emission spectroscopy , 1996 .

[3]  H. Barshilia,et al.  Concentration of atomic hydrogen in the ground state in a CH4‐H2 microwave plasma , 1996 .

[4]  V. A. Alekseev,et al.  A pulsed source for Xe(6s[3/2]1) and Xe(6s′[1/2]1) resonance state atoms using two‐photon driven amplified spontaneous emission from the Xe(6p) and Xe(6p′) states , 1996 .

[5]  Gottlieb S. Oehrlein,et al.  Chemical dry etching of silicon nitride and silicon dioxide using CF4/O2/N2 gas mixtures , 1996 .

[6]  G. Brussaard,et al.  Diagnostics of the magnetized low-pressure hydrogen plasma jet: Molecular regime , 1996 .

[7]  D. Setser,et al.  Quenching Rate Constants and Product Assignments for Reactions of Xe(7p[3/2]2, 7p[5/2]2, and 6p‘[3/2]2) Atoms with Rare Gases, CO, H2, N2O, CH4, and Halogen-Containing Molecules , 1996 .

[8]  A. Tserepi,et al.  Angular momentum state mixing and quenching of n=3 atomic hydrogen fluorescence , 1995 .

[9]  H. Döbele,et al.  Experimental tests of a novel Raman cell for vacuum ultraviolet generation to below Lyman-α. , 1994, Applied optics.

[10]  N. Sadeghi,et al.  Tungsten etching mechanisms in low‐pressure SF6 plasma , 1992 .

[11]  R. Gottscho,et al.  Quenching rates of Ar metastables in radio‐frequency glow discharges , 1988 .

[12]  U. Meier,et al.  Quenching of two-photon-excited H(3s, 3d) and O(3p 3P2,1,0) atoms by rare gases and small molecules , 1988 .

[13]  U. Czarnetzki,et al.  Fluorescence spectroscopy of low-Z-materials: Application of Raman-converted VUV-radiation to beryllium and oxygen , 1987 .

[14]  S. Nogita,et al.  Synthesis of diamond by decomposition of methane in microwave plasma , 1986 .

[15]  Terry A. Miller,et al.  Optical techniques in plasma diagnostics , 1984 .

[16]  V. M. Donnelly,et al.  Anisotropic etching of SiO2 in low‐frequency CF4/O2 and NF3/Ar plasmas , 1984 .

[17]  N. Sadeghi,et al.  Radiative lifetimes and collisional energy transfer rate constants in Ar of the Ar(3p55p) and Ar(3p55p′) states , 1982 .

[18]  J. Coburn,et al.  Optical emission spectroscopy of reactive plasmas: A method for correlating emission intensities to reactive particle density , 1980 .

[19]  J. Velazco,et al.  Rate constants and quenching mechanisms for the metastable states of argon, krypton, and xenon , 1978 .

[20]  R. Chang,et al.  Radiative lifetimes and two‐body deactivation rate constants for Ar(3p5, 4p) and Ar(3p5,4p′) states , 1978 .

[21]  R. A. Lilly Transition probabilities in the spectra of Ne i, Ar i, and Kr i , 1976 .