A method for improving convergence in a power semiconductor device analysis program

A new simulation technique for analyzing power semiconductor devices is presented in this paper. In this technique, quasifermi potentials are used as variables for current continuity equations and the upwind differential scheme is used for discretizing the current continuity equations after linearization according to Gummel's method. With this technique, it is possible to analyze the high bias condition of a device using a relatively rough mesh. A detailed design of breakdown voltage can be created since carrier generation and recombination are taken into account. The efficacy of this technique is confirmed by comparing the simulation results obtained using this new technique to assess the lateral MOSFET model with those obtained using a model reported previously. Analyses of 600 V- and 40 V- VD-MOSFET using this new technique are carried out, and it is shown that the new technique is effective for modeling power semiconductor devices.

[1]  A. Nakagawa,et al.  A time- and temperature-dependent 2-D simulation of the GTO thyristor turn-off process , 1984, IEEE Transactions on Electron Devices.

[2]  W. Read,et al.  Statistics of the Recombinations of Holes and Electrons , 1952 .

[3]  Siegfried Selberherr,et al.  MINIMOS—A two-dimensional MOS transistor analyzer , 1980 .

[4]  R. Hall.  Electron-Hole Recombination in Germanium , 1952 .

[5]  William N. Carr,et al.  MOS/LSI design and application , 1972 .

[6]  François Thomasset,et al.  Implementation of Finite Element Methods for Navier-Stokes Equations , 1981 .

[7]  K. Yamaguchi.  Field-dependent mobility model for two-dimensional numerical analysis of MOSFET's , 1979, IEEE Transactions on Electron Devices.

[8]  M. Mock.  A two-dimensional mathematical model of the insulated-gate field-effect transistor , 1973 .

[9]  K. Shenai,et al.  Analytical solutions for avalanche-breakdown voltages of single-diffused gaussian junctions☆ , 1983 .

[10]  J. Slotboom,et al.  Computer-aided two-dimensional analysis of bipolar transistors , 1973 .

[11]  S. Asai,et al.  A numerical model of avalanche breakdown in MOSFET's , 1978, IEEE Transactions on Electron Devices.

[12]  H. Fukui,et al.  One-dimensional analysis of reverse recovery and dv/dt triggering characteristics for a thyristor , 1980, IEEE Transactions on Electron Devices.

[13]  H. L. Stone.  ITERATIVE SOLUTION OF IMPLICIT APPROXIMATIONS OF MULTIDIMENSIONAL PARTIAL DIFFERENTIAL EQUATIONS , 1968 .