A method for the investigation of double‐layer effects at solid electrodes

The study of double-layer effects at solid electrodes is often hindered by the lack of precise values for the zero-charge potentials. This paper presents a method with which the Guoy-Chapman-Stern theory can be applied to cyclic voltammetric data in the absence of zero-charge potential values. The new method uses the voltammetric peak potentials of reversible redox couples as probes of double-layer structure and requires the elimination of iR drop from the measured values. A new method for the elimination of iR drop is also presented, based on the proportionality of uncompensated resistance to working-to-reference electrode distance in an axisymmetric cylindrical cell.

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