论文信息 - Cointegration of High-Performance Tied-Gate Three-Terminal FinFETs and Variable Threshold-Voltage Independent-Gate Four-Terminal FinFETs With Asymmetric Gate-Oxide Thicknesses - 字舞流文

Cointegration of High-Performance Tied-Gate Three-Terminal FinFETs and Variable Threshold-Voltage Independent-Gate Four-Terminal FinFETs With Asymmetric Gate-Oxide Thicknesses

E. Suzuki | K. Ishii | K. Endo | T. Matsukawa | S. O'Uchi | M. Masahara | Yongxun Liu | J. Tsukada | H. Yamauchi | Y. Ishikawa