Evaluation of temperature dependence and lifetime of 79GHz power amplifier

A 79 GHz power amplifier (PA) using 4-stages common-source structure is presented in this paper. To evaluate temperature dependence of circuit characteristics, the PA is measured at various temperatures. At room temperature (RT) and 100°C, the saturated output power is 7.6 and 7.1dBm, the maximum PAE is 6.2% and 4.9%, respectively. The reliability and lifetime of PA is also obtained. To the author's knowledge, this is the first paper to show the lifetime results of PA at two different biases in 40nm CMOS process.

[1]  D. Dawn,et al.  17-dB-gain CMOS power amplifier at 60GHz , 2008, 2008 IEEE MTT-S International Microwave Symposium Digest.

[2]  A. Tomkins,et al.  Nanoscale CMOS Transceiver Design in the 90–170-GHz Range , 2009, IEEE Transactions on Microwave Theory and Techniques.

[3]  Kun-Hin To,et al.  A 76-81GHz transmitter with 10dBm output power at 125 °C for automotive radar in 65nm bulk CMOS , 2011, 2011 IEEE Custom Integrated Circuits Conference (CICC).

[4]  A. Tomkins,et al.  A Zero-IF 60 GHz 65 nm CMOS Transceiver With Direct BPSK Modulation Demonstrating up to 6 Gb/s Data Rates Over a 2 m Wireless Link , 2009, IEEE Journal of Solid-State Circuits.

[5]  Bevin Perumana,et al.  60GHz CMOS power amplifier with 20-dB-gain and 12dBm Psat , 2009, 2009 IEEE MTT-S International Microwave Symposium Digest.