论文信息 - InAlAs/InGaAs/InP HFET with suppressed impact ionization using dual-gate cascode-devices - 字舞流文

InAlAs/InGaAs/InP HFET with suppressed impact ionization using dual-gate cascode-devices

F. Tegude | U. Auer | R. Reuter | R. Bertenburg | W. Brockerhoff | W. Daumann | P. Ellrodt | W. Molls