论文信息 - Direct-digital RF modulator IC in 0.13 /spl mu/m CMOS for wide-band multi-radio applications

Direct-digital RF modulator IC in 0.13 /spl mu/m CMOS for wide-band multi-radio applications

An IQ-modulator constructed using direct digital-to-RF converters for wide-band multi-radio applications achieves better than -43dBc of LO-leakage and -47dBc of image rejection. The signal-level dependent maximum power consumption is 60.5mW with a -10dBm WCDMA signal. The modulator occupies 0.7mm/sup 2/ of silicon area in a standard 1.2V 0.13 /spl mu/m CMOS process.

P. Eloranta | P. Seppinen | P. Eloranta | P. Seppinen

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