Junction Temperature Measurement Method for Power mosfets Using Turn-On Delay of Impulse Signal

This paper proposes a novel method for junction temperature measurement of power metal-oxide-semiconductor field-effect transistors (mosfets). The measurement method is using the turn-on delay of impulse signal, which is the delay time between the rising edge of impulse signal and the corresponding rising edge of drain–source current. Results show that the turn-on delay has a good linear relationship with temperature, and the method is suitably efficient for accurate junction temperature measurement of power mosfet s. The proposed method is verified using the thermal infrared method. Finally, this method is used to measure the real-time junction temperature of power mosfet device in a dc–dc boost converter.

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