Discrete and integrated MOS power technologies

Abstract This paper presents a general overview of the major recent developments in MOS power technologies. These technologies have evolved in two main directions. First, towards devices that have resulted from standard MOS power components : either new designs for more performant structures or structures involving more complex electric functions. The second direction is the integration of monolithic circuits including both high-voltage or power MOS devices and low voltage control logic.

[1]  P. Hower,et al.  Optimum design of power MOSFETs , 1983, 1983 International Electron Devices Meeting.

[2]  C.A.T. Salama,et al.  Depletion V-groove MOS (VMOS) power transistors , 1976 .

[3]  C.A.T. Salama,et al.  Transconductance degradation in VVMOS power transistors due to thermal and field effects , 1982 .

[4]  Philippe Leturcq Power bipolar devices , 1984 .

[5]  S.P. Robb,et al.  Integrated circuits for the control of high power , 1983, 1983 International Electron Devices Meeting.

[6]  L. Leipold,et al.  A FET-controlled thyristor in SIPMOS technology , 1980, 1980 International Electron Devices Meeting.

[7]  T. Masuhara,et al.  Device Design of an Ion Implanted High Voltage MOSFET , 1974 .

[8]  J. Tihanyi,et al.  Power MOS transistors for 1000 V blocking voltage , 1981, 1981 International Electron Devices Meeting.

[9]  T. Okabe,et al.  Extremely high efficient UHF power MOSFET for handy transmitter , 1983, 1983 International Electron Devices Meeting.

[10]  J. Lebailly,et al.  A new V.MOS/Bipolar Darlington transistor for power applications , 1980, 1980 International Electron Devices Meeting.

[11]  A. Goodman,et al.  Improved COMFETs with fast switching speed and high-current capability , 1983, 1983 International Electron Devices Meeting.

[12]  C.A.T. Salama,et al.  Depletion m.o.s. power transistors , 1975 .

[13]  J. P. Chante,et al.  Improvement of on-resistance of MOS-gated devices , 1982 .

[14]  Chenming Hu A parametric study of power MOSFETs , 1979, 1979 IEEE Power Electronics Specialists Conference.

[15]  J. Tihanyi,et al.  Functional integration of power MOS and bipolar devices , 1980, 1980 International Electron Devices Meeting.

[16]  S. Ghandhi Semiconductor power devices , 1977 .

[17]  J. Plummer,et al.  Monolithic MOS high voltage integrated circuits , 1980, 1980 International Electron Devices Meeting.

[18]  C.A. Fisher,et al.  Detailed comparison of experiment and theory of passivation ring structures for power devices , 1983, 1983 International Electron Devices Meeting.

[19]  P. Rossel,et al.  Protection des transistors MOS en régime de deuxième claquage , 1982 .

[20]  S.-Y. Yu,et al.  New V-groove double-diffused m.o.s. (v.d.m.o.s.) , 1976 .

[21]  J. Tihanyi Integrated power devices , 1982, 1982 International Electron Devices Meeting.

[22]  P. Rossel,et al.  Safe operating area of the MOS'T : Second breakdown limitations , 1985 .

[23]  M.S. Adler,et al.  25 amp, 500 volt insulated gate transistors , 1983, 1983 International Electron Devices Meeting.

[24]  M. Pocha High voltage double diffused MOS transistors for integrated circuits , 1976 .

[25]  C.A.T. Salama A new short channel MOSFET structure (UMOST) , 1977 .

[26]  Adolph Blicher Field-Effect and Bipolar Power Transistor Physics , 1981 .

[27]  A.R. Alvarez,et al.  Lateral DMOS transistor optimized for high voltage BIMOS applications , 1983, 1983 International Electron Devices Meeting.

[28]  T. Okabe,et al.  A complementary-pair of high-power MOSFET's , 1977, 1977 International Electron Devices Meeting.