论文信息 - Nondestructive multiple breakdown events in very thin SiO2 films

Nondestructive multiple breakdown events in very thin SiO2 films

Several breakdown events and multilevel current fluctuations have been observed when ultrathin SiO2 films are subjected to constant‐voltage stresses. These breakdown events are sometimes reversible, and consist in a local change of conduction mechanism. This reversibility shows that no catastrophic thermal effects occur, and that the breakdown is only a local switching between two oxide conduction states of very different conductivities.

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