Crack-free ultraviolet AlGaN/GaN distributed Bragg reflectors grown by MOVPE on 6H-SiC(0 0 0 1)

[1]  Perlin,et al.  Raman scattering and x-ray-absorption spectroscopy in gallium nitride under high pressure. , 1992, Physical review. B, Condensed matter.

[2]  Theeradetch Detchprohm,et al.  Relaxation Process of the Thermal Strain in the GaN/α-Al2O3 Heterostructure and Determination of the Intrinsic Lattice Constants of GaN Free from the Strain , 1992 .

[3]  Y. Arakawa,et al.  Highly reflective GaN/Al0.34Ga0.66N quarter-wave reflectors grown by metal organic chemical vapor deposition , 1998 .

[4]  P. Vennégués,et al.  Comparative study of GaN layers grown on insulating AlN and conductive AlGaN buffer layers , 1999 .

[5]  Theodore D. Moustakas,et al.  Distributed Bragg reflectors based on AlN/GaN multilayers , 1999 .

[6]  Catalano,et al.  Room temperature lasing at blue wavelengths in gallium nitride microcavities , 1999, Science.

[7]  R. Langer,et al.  High-reflectivity GaN/GaAlN Bragg mirrors at blue/green wavelengths grown by molecular beam epitaxy , 1999 .

[8]  Takashi Jimbo,et al.  Improved characteristics of InGaN multiple-quantum-well light-emitting diode by GaN/AlGaN distributed Bragg reflector grown on sapphire , 2000 .

[9]  Theodore D. Moustakas,et al.  High reflectivity and broad bandwidth AlN/GaN distributed Bragg reflectors grown by molecular-beam epitaxy , 2000 .

[10]  Improved Responsivity of AlGaN-Based Resonant Cavity-Enhanced UV Photodetectors Grown on Sapphire by RF-MBE , 2002 .

[11]  J. Carlin,et al.  High-quality AlInN for high index contrast Bragg mirrors lattice matched to GaN , 2003 .

[12]  H. Temkin,et al.  Dependence of the stress–temperature coefficient on dislocation density , 2004 .

[13]  H. Kuo,et al.  MOCVD growth of AlN/GaN DBR structures under various ambient conditions , 2004 .

[14]  O. Brandt,et al.  Conductive and crack-free AlN/GaN:Si distributed Bragg reflectors grown on 6H-SiC(0001) , 2005 .

[15]  Marc Ilegems,et al.  Crack-free fully epitaxial nitride microcavity using highly reflective AlInN∕GaN Bragg mirrors , 2005 .

[16]  H. Kuo,et al.  Crack-free GaN∕AlN distributed Bragg reflectors incorporated with GaN∕AlN superlattices grown by metalorganic chemical vapor deposition , 2006 .

[17]  Theo Siegrist,et al.  High-reflectivity ultraviolet AlGaN∕AlGaN distributed Bragg reflectors , 2006 .

[18]  J. Carlin,et al.  Crack-free highly reflective AlInN /AlGaN Bragg mirrors for UV applications , 2006 .

[19]  C. Weisbuch,et al.  Demonstration of Distributed Bragg Reflectors for Deep Ultraviolet Applications , 2007 .

[20]  P. Han,et al.  High reflectivity AlGaN/AlN DBR mirrors grown by MOCVD , 2007 .

[21]  J. Y. Zhang,et al.  High-reflectivity AlN/GaN distributed Bragg reflectors grown on sapphire substrates by MOCVD , 2011 .

[22]  Dechao Yang,et al.  Improvement of quality and strain relaxation of GaN epilayer grown on SiC substrate by in situ SiNx interlayer , 2013, Journal of Materials Science: Materials in Electronics.

[23]  Joel Jacquet,et al.  Suppression of crack generation in AlGaN/GaN distributed Bragg reflectors grown by MOVPE , 2013 .