Stacked-nitride oxide gate MISFET with high hot-carrier-immunity
暂无分享,去创建一个
[1] T. Hori,et al. The impact of ultrathin nitrided oxide gate-dielectrics on MOS device performance improvement , 1989, International Technical Digest on Electron Devices Meeting.
[2] Hiroshi Iwai,et al. Hot carrier related phenomena for n- and p-MOSFETs with nitrided gate oxide by RTP , 1989, International Technical Digest on Electron Devices Meeting.
[3] C.W. Teng,et al. Scalability of a trench capacitor cell for 64 Mbit DRAM , 1989, International Technical Digest on Electron Devices Meeting.
[4] Fumio Horiguchi,et al. A spread stacked capacitor (SSC) cell for 64 Mbit DRAMs , 1989, International Technical Digest on Electron Devices Meeting.
[5] S. Inoue,et al. A surrounding gate transistor (SGT) cell for 64/256 Mbit DRAMs , 1989, International Technical Digest on Electron Devices Meeting.
[6] H. Iwai,et al. Analysis of an ONO gate film effect on n- and p-MOSFET mobilities , 1990, Digest of Technical Papers.1990 Symposium on VLSI Technology.
[7] D. Horak,et al. A high performance 16-Mb DRAM technology , 1990, Digest of Technical Papers.1990 Symposium on VLSI Technology.
[8] A. Wu,et al. Nitridation‐induced surface donor layer in silicon , 1989 .