Relaxation and crystallization kinetics of amorphous germanium films by nanosecond laser pulses

Relaxation and crystallization of amorphous germanium films on silicon are induced by nanosecond laser pulses. Real time reflectivity measurements and Raman spectroscopy show that amorphous regrowth occurs upon melting and rapid solidification of the film because the thermal conductivity of the silicon substrate is high enough to extract the laser energy absorbed by the film in a very efficient way. The amorphous regrown film is in a relaxed state when compared to the as‐grown amorphous material. Further pulses induce fast crystallization of the film. An increase of the melting threshold is found upon relaxation and crystallization of the film.Relaxation and crystallization of amorphous germanium films on silicon are induced by nanosecond laser pulses. Real time reflectivity measurements and Raman spectroscopy show that amorphous regrowth occurs upon melting and rapid solidification of the film because the thermal conductivity of the silicon substrate is high enough to extract the laser energy absorbed by the film in a very efficient way. The amorphous regrown film is in a relaxed state when compared to the as‐grown amorphous material. Further pulses induce fast crystallization of the film. An increase of the melting threshold is found upon relaxation and crystallization of the film.

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